TY  - JOUR
AU  - Just, Sven
AU  - Blab, Marcus
AU  - Korte, Stefan
AU  - Cherepanov, Vasily
AU  - Soltner, Helmut
AU  - Voigtländer, Bert
TI  - Surface and Step Conductivities on Si(111) Surfaces
JO  - Physical review letters
VL  - 115
IS  - 6
SN  - 1079-7114
CY  - College Park, Md.
PB  - APS
M1  - FZJ-2016-00629
SP  - 066801
PY  - 2015
AB  - Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of σstep=(29±9)  Ω−1 m−1 and to a step-free surface conductivity of σsurf=(9±2)×10−6  Ω−1/□ for the Si(111)−(7×7) surface.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000358937600009
DO  - DOI:10.1103/PhysRevLett.115.066801
UR  - https://juser.fz-juelich.de/record/280918
ER  -