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@ARTICLE{Just:280918,
author = {Just, Sven and Blab, Marcus and Korte, Stefan and
Cherepanov, Vasily and Soltner, Helmut and Voigtländer,
Bert},
title = {{S}urface and {S}tep {C}onductivities on {S}i(111)
{S}urfaces},
journal = {Physical review letters},
volume = {115},
number = {6},
issn = {1079-7114},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2016-00629},
pages = {066801},
year = {2015},
abstract = {Four-point measurements using a multitip scanning tunneling
microscope are carried out in order to determine surface and
step conductivities on Si(111) surfaces. In a first step,
distance-dependent four-point measurements in the linear
configuration are used in combination with an analytical
three-layer model for charge transport to disentangle the 2D
surface conductivity from nonsurface contributions. A
termination of the Si(111) surface with either Bi or H
results in the two limiting cases of a pure 2D or 3D
conductance, respectively. In order to further disentangle
the surface conductivity of the step-free surface from the
contribution due to atomic steps, a square four-probe
configuration is applied as a function of the rotation
angle. In total, this combined approach leads to an atomic
step conductivity of σstep=(29±9) Ω−1 m−1 and
to a step-free surface conductivity of
σsurf=(9±2)×10−6 Ω−1/□ for the
Si(111)−(7×7) surface.},
cin = {PGI-3 / JARA-FIT},
ddc = {550},
cid = {I:(DE-Juel1)PGI-3-20110106 / $I:(DE-82)080009_20140620$},
pnm = {141 - Controlling Electron Charge-Based Phenomena
(POF3-141)},
pid = {G:(DE-HGF)POF3-141},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000358937600009},
doi = {10.1103/PhysRevLett.115.066801},
url = {https://juser.fz-juelich.de/record/280918},
}