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000281085 1001_ $$0P:(DE-Juel1)156365$$aZhang, Hehe$$b0$$ufzj
000281085 1112_ $$aNanoelectronics Days$$cJülich$$d2015-05-25 - 2015-05-29$$wGermany
000281085 245__ $$aResistive Switching Behavior in ReRAM Cells of Oxide Bilayers grown by Atomic Layer Deposition
000281085 260__ $$c2015
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000281085 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000281085 7001_ $$0P:(DE-Juel1)165703$$aFunck, Carsten$$b1$$ufzj
000281085 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b2$$ufzj
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000281085 9141_ $$y2015
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