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Resistive Switching Behavior in ReRAM Cells of Oxide Bilayers grown by Atomic Layer Deposition

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2015

Nanoelectronics Days, JülichJülich, Germany, 25 May 2015 - 29 May 20152015-05-252015-05-29

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015
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The record appears in these collections:
Document types > Presentations > Poster
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2016-01-21, last modified 2021-01-29
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