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@INPROCEEDINGS{Zhang:281085,
      author       = {Zhang, Hehe and Funck, Carsten and Hoffmann-Eifert,
                      Susanne},
      title        = {{R}esistive {S}witching {B}ehavior in {R}e{RAM} {C}ells of
                      {O}xide {B}ilayers grown by {A}tomic {L}ayer {D}eposition},
      reportid     = {FZJ-2016-00790},
      year         = {2015},
      month         = {May},
      date          = {2015-05-25},
      organization  = {Nanoelectronics Days, Jülich
                       (Germany), 25 May 2015 - 29 May 2015},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/281085},
}