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000281086 1001_ $$0P:(DE-Juel1)156365$$aZhang, Hehe$$b0$$ufzj
000281086 1112_ $$aEuropean Materials Research Society meeting$$cLille$$d2015-05-11 - 2015-05-15$$wFrance
000281086 245__ $$aComparison of the Resistance Switching Behavior of  Ex-situ and In-situ STO Thin Films grown by Atomic Layer Deposition
000281086 260__ $$c2015
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000281086 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000281086 7001_ $$0P:(DE-HGF)0$$aLee, W.$$b1
000281086 7001_ $$0P:(DE-Juel1)156312$$aXu, Chengcheng$$b2$$ufzj
000281086 7001_ $$0P:(DE-Juel1)165704$$aHardtdegen, Alexander$$b3$$ufzj
000281086 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b4$$ufzj
000281086 7001_ $$0P:(DE-HGF)0$$aHwang, C. S.$$b5
000281086 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6$$ufzj
000281086 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b7$$ufzj
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000281086 9141_ $$y2015
000281086 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
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