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@ARTICLE{Mikulics:282870,
      author       = {Mikulics, M. and Arango, Yulieth and Winden, Andreas and
                      Adam, Roman and Hardtdegen, Alexander and Grützmacher,
                      Detlev and Plinski, E. and Gregušová, D. and Novák, J.
                      and Kordoš, P. and Moonshiram, A. and Marso, M. and Sofer,
                      Z. and Lüth, Hans and Hardtdegen, Hilde},
      title        = {{D}irect electro-optical pumping for hybrid {C}d{S}e
                      nanocrystal/{III}-nitride based nano-light-emitting diodes},
      journal      = {Applied physics letters},
      volume       = {108},
      number       = {6},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2016-01617},
      pages        = {061107 -},
      year         = {2016},
      abstract     = {We propose a device concept for a hybrid
                      nanocrystal/III-nitride based nano-LED. Our approach is
                      based on the direct electro-optical pumping of nanocrystals
                      (secondary excitation) by electrically driven InGaN/GaN
                      nano-LEDs as the primary excitation source. To this end, a
                      universal hybrid optoelectronic platform was developed for a
                      large range of optically active nano- and mesoscopic
                      structures. The advantage of the approach is that the
                      emission of the nanocrystals can be electrically induced
                      without the need of contacting them. The proof of principal
                      was demonstrated for the electro-optical pumping of CdSe
                      nanocrystals. The nano-LEDs with a diameter of 100 nm
                      exhibit a very low current of 8 nA at 5V bias which is
                      several orders of magnitude smaller than for those
                      conventionally used. The leakage currents in the device
                      layout were typically in the range of 8 pA to 20 pA/cm2 at
                      5V bias. The photon-photon down conversion efficiency was
                      determined to be $27\%.$ Microphotoluminescence and
                      microelectroluminescence characterization demonstrate the
                      potential for future optoelectronics and highly secure
                      “green” information technology applications.},
      cin          = {PGI-9 / JARA-FIT / PGI-6 / PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000373056300007},
      doi          = {10.1063/1.4941923},
      url          = {https://juser.fz-juelich.de/record/282870},
}