Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Mikulics, M.; Gregušová, D.; Marso, M.; Novák, J.; Moonshiram, A.; Lüth, Hans; Hardtdegen, Hilde; Hardtdegen, Alexander; Plinski, E.; Winden, Andreas; Adam, Roman; Sofer, Z.; Kordoš, P.; Grützmacher, Detlev; Arango, Yulieth

doi:10.1063/1.4941923

Journal Article

FZJ-2016-01617

Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Mikulics, M. (Corresponding author)FZJ* ; Arango, Y.FZJ* ; Winden, A.FZJ* ; Adam, R.FZJ* ; Hardtdegen, A.FZJ* ; Grützmacher, D.FZJ* ; Plinski, E. ; Gregušová, D. ; Novák, J. ; Kordoš, P. ; Moonshiram, A. ; Marso, M. ; Sofer, Z. ; Lüth, H.FZJ* ; Hardtdegen, H.FZJ*

2016
American Inst. of Physics Melville, NY

Applied physics letters 108(6), 061107 - (2016) [10.1063/1.4941923]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17305 doi:10.1063/1.4941923

Abstract: We propose a device concept for a hybrid nanocrystal/III-nitride based nano-LED. Our approach is based on the direct electro-optical pumping of nanocrystals (secondary excitation) by electrically driven InGaN/GaN nano-LEDs as the primary excitation source. To this end, a universal hybrid optoelectronic platform was developed for a large range of optically active nano- and mesoscopic structures. The advantage of the approach is that the emission of the nanocrystals can be electrically induced without the need of contacting them. The proof of principal was demonstrated for the electro-optical pumping of CdSe nanocrystals. The nano-LEDs with a diameter of 100 nm exhibit a very low current of 8 nA at 5V bias which is several orders of magnitude smaller than for those conventionally used. The leakage currents in the device layout were typically in the range of 8 pA to 20 pA/cm2 at 5V bias. The photon-photon down conversion efficiency was determined to be 27%. Microphotoluminescence and microelectroluminescence characterization demonstrate the potential for future optoelectronics and highly secure “green” information technology applications.

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