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@ARTICLE{Rose:28487,
      author       = {Rose, V. and Podgurski, V. and Costina, I. and Franchy, R.},
      title        = {{G}rowth of ultra-thin amorphous {A}l2{O}3 films on
                      {C}o{A}l(100)},
      journal      = {Surface science},
      volume       = {541},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-28487},
      pages        = {128},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The oxidation of a CoAl(100) surface at 300 K was studied
                      by means of Auger electron spectroscopy, high resolution
                      electron energy loss spectroscopy (EELS), low energy
                      electron diffraction and scanning tunneling microscopy
                      (STM). For an exposure less than or equal to 0.3 L, the
                      oxygen atoms are chemisorbed on the CoAl(100) surface, while
                      for a larger O-2 exposure the oxidation of the surface sets
                      in. For an exposure greater than or equal to 300 L the
                      surface is entirely covered with amorphous Al2O3
                      (alpha-Al2O3) whereas the Co atoms seem to be unaffected.
                      The EEL spectra of alpha-Al2O3 exhibit Fuchs-Kliewer modes
                      at around 640 and 890 cm(-1). The thickness of the
                      alpha-Al2O3 film is estimated to be 7.1 +/- 0.7 Angstrom.
                      The STM images show that the oxide grows as large islands
                      which cover the whole surface. The band gap of the
                      ultra-thin alpha-Al2O3 film on CoAl(100) is found to be 3.2
                      eV and thus it is strongly diminished with respect to the
                      bulk value. (C) 2003 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000184970600012},
      doi          = {10.1016/S0039-6028(03)00891-4},
      url          = {https://juser.fz-juelich.de/record/28487},
}