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High temperature-STM investigation of epitaxial growth of Si and Ge on silicon

 ;

2000

ISBN: 981-02-4251-4

Structure and dynamics of heterogeneous systems / ed.: P. Entel ... - Singapore, 2000. - 981-02-4251-4. - S. 108

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Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Grenzflächenforschung und Vakuumphysik (IGV)
Research Program(s):
  1. Grenzflächenaspekte der Informationstechnik (25.35.0)

Appears in the scientific report 2000
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Document types > Presentations > Conference Presentations
Document types > Books > Books
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 Record created 2012-11-13, last modified 2017-06-01
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