TY  - CONF
AU  - Voigtländer, B.
AU  - Theuerkauf, M. N.
TI  - High temperature-STM investigation of epitaxial growth of Si and Ge on silicon
M1  - PreJuSER-28488
SN  - 981-02-4251-4
PY  - 2000
N1  - Record converted from VDB: 12.11.2012
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
UR  - https://juser.fz-juelich.de/record/28488
ER  -