Hauptseite > Publikationsdatenbank > High temperature-STM investigation of epitaxial growth of Si and Ge on silicon > print

001     28488
005     20170601201044.0
020 _ _ |a 981-02-4251-4
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100 1 _ |a Voigtländer, B.
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245 _ _ |a High temperature-STM investigation of epitaxial growth of Si and Ge on silicon
260 _ _ |c 2000
295 1 0 |a Structure and dynamics of heterogeneous systems / ed.: P. Entel ... - Singapore, 2000. - 981-02-4251-4. - S. 108
336 7 _ |a Contribution to a conference proceedings
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336 7 _ |a Contribution to a book
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336 7 _ |a Conference Paper
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336 7 _ |a CONFERENCE_PAPER
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500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Conference proceedings / Book
536 _ _ |a Grenzflächenaspekte der Informationstechnik
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700 1 _ |a Theuerkauf, M. N.
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909 C O |o oai:juser.fz-juelich.de:28488
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913 1 _ |k 25.35.0
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914 1 _ |y 2000
920 1 _ |k IGV
|l Institut für Grenzflächenforschung und Vakuumphysik
|d 31.12.2000
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970 _ _ |a VDB:(DE-Juel1)22164
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980 _ _ |a book
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