Contribution to a conference proceedings/Contribution to a book

PreJuSER-28489

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Growth and decay of germanium islands on silicon studied by high temperature STM

Voigtländer, B.FZJ* ; Kästner, M.

2000

ISBN: 1-55899-491-2

This record in other databases:

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Institut für Grenzflächenforschung und Vakuumphysik (IGV)

Research Program(s):

1. Grenzflächenaspekte der Informationstechnik (25.35.0)

Appears in the scientific report 2000

---