Home > Publications database > Growth and decay of germanium islands on silicon studied by high temperature STM > print

001     28489
005     20170601193255.0
020 _ _ |a 1-55899-491-2
037 _ _ |a PreJuSER-28489
100 1 _ |a Voigtländer, B.
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245 _ _ |a Growth and decay of germanium islands on silicon studied by high temperature STM
260 _ _ |c 2000
295 1 0 |a MRS proceedings. - 583 (2000). - 1-55899-491-2. - S. 155 - 166
336 7 _ |a Contribution to a conference proceedings
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|2 PUB:(DE-HGF)
336 7 _ |a Contribution to a book
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336 7 _ |a Conference Paper
|0 33
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336 7 _ |a CONFERENCE_PAPER
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336 7 _ |a Output Types/Conference Paper
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336 7 _ |a conferenceObject
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336 7 _ |a INPROCEEDINGS
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500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Conference proceedings / Book
536 _ _ |a Grenzflächenaspekte der Informationstechnik
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700 1 _ |a Kästner, M.
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909 C O |o oai:juser.fz-juelich.de:28489
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913 1 _ |k 25.35.0
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914 1 _ |y 2000
920 1 _ |k IGV
|l Institut für Grenzflächenforschung und Vakuumphysik
|d 31.12.2000
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970 _ _ |a VDB:(DE-Juel1)22165
980 _ _ |a VDB
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980 _ _ |a book
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980 _ _ |a I:(DE-Juel1)VDB167
980 _ _ |a UNRESTRICTED

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