| Hauptseite > Publikationsdatenbank > Growth and decay of germanium islands on silicon studied by high temperature STM > EndNote Text |
%0 Conference Paper %A Voigtländer, B. %A Kästner, M. %T Growth and decay of germanium islands on silicon studied by high temperature STM %M PreJuSER-28489 %@ 1-55899-491-2 %D 2000 %Z Record converted from VDB: 12.11.2012 %< MRS proceedings. - 583 (2000). - 1-55899-491-2. - S. 155 - 166 %F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7 %9 Contribution to a conference proceedingsContribution to a book %U https://juser.fz-juelich.de/record/28489