%0 Journal Article
%A Giesen, M.
%A Ibach, H.
%T Homoepitaxial growth on nominally flat and stepped Cu(111) surfaces : island nucleation in fcc sites vs. hcp stacking fault sites
%J Surface science
%V 529
%@ 0039-6028
%C Amsterdam
%I Elsevier
%M PreJuSER-28614
%P 135 - 143
%D 2003
%Z Record converted from VDB: 12.11.2012
%X We have investigated island nucleation in homoepitaxial growth on nominally flat and stepped (vicinal) Cu(1 1 1) surfaces using scanning tunneling microscopy. While on nominally flat Cu(1 1 1), Cu islands nucleate in fcc sites, island nucleation occurs rather in hcp stacking fault sites on stepped Cu(1 1 1) surfaces. We propose that strain on surfaces introduced by steps plays a significant role for the preferred sites. (C) 2003 Elsevier Science B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000181957100014
%R 10.1016/S0039-6028(03)00077-3
%U https://juser.fz-juelich.de/record/28614