Journal Article

PreJuSER-28614

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Homoepitaxial growth on nominally flat and stepped Cu(111) surfaces : island nucleation in fcc sites vs. hcp stacking fault sites

Giesen, M.FZJ* ; Ibach, H.FZJ*

2003
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/S0039-6028(03)00077-3

Abstract: We have investigated island nucleation in homoepitaxial growth on nominally flat and stepped (vicinal) Cu(1 1 1) surfaces using scanning tunneling microscopy. While on nominally flat Cu(1 1 1), Cu islands nucleate in fcc sites, island nucleation occurs rather in hcp stacking fault sites on stepped Cu(1 1 1) surfaces. We propose that strain on surfaces introduced by steps plays a significant role for the preferred sites. (C) 2003 Elsevier Science B.V. All rights reserved.

Keyword(s): J ; epitaxy (auto) ; growth (auto) ; surface defects (auto) ; nucleation (auto) ; copper (auto) ; metallic surfaces (auto) ; stepped single crystal surfaces (auto) ; scanning tunneling microscopy (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)
2. Institut für biologisch-anorganische Grenzflächen (ISG-4)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2003

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