000028614 001__ 28614
000028614 005__ 20200402210453.0
000028614 0247_ $$2DOI$$a10.1016/S0039-6028(03)00077-3
000028614 0247_ $$2WOS$$aWOS:000181957100014
000028614 037__ $$aPreJuSER-28614
000028614 041__ $$aeng
000028614 082__ $$a540
000028614 084__ $$2WoS$$aChemistry, Physical
000028614 084__ $$2WoS$$aPhysics, Condensed Matter
000028614 1001_ $$0P:(DE-Juel1)4744$$aGiesen, M.$$b0$$uFZJ
000028614 245__ $$aHomoepitaxial growth on nominally flat and stepped Cu(111) surfaces : island nucleation in fcc sites vs. hcp stacking fault sites
000028614 260__ $$aAmsterdam$$bElsevier$$c2003
000028614 300__ $$a135 - 143
000028614 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000028614 3367_ $$2DataCite$$aOutput Types/Journal article
000028614 3367_ $$00$$2EndNote$$aJournal Article
000028614 3367_ $$2BibTeX$$aARTICLE
000028614 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000028614 3367_ $$2DRIVER$$aarticle
000028614 440_0 $$05673$$aSurface Science$$v529$$x0039-6028
000028614 500__ $$aRecord converted from VDB: 12.11.2012
000028614 520__ $$aWe have investigated island nucleation in homoepitaxial growth on nominally flat and stepped (vicinal) Cu(1 1 1) surfaces using scanning tunneling microscopy. While on nominally flat Cu(1 1 1), Cu islands nucleate in fcc sites, island nucleation occurs rather in hcp stacking fault sites on stepped Cu(1 1 1) surfaces. We propose that strain on surfaces introduced by steps plays a significant role for the preferred sites. (C) 2003 Elsevier Science B.V. All rights reserved.
000028614 536__ $$0G:(DE-Juel1)FUEK242$$2G:(DE-HGF)$$aKondensierte Materie$$cM02$$x0
000028614 588__ $$aDataset connected to Web of Science
000028614 650_7 $$2WoSType$$aJ
000028614 65320 $$2Author$$aepitaxy
000028614 65320 $$2Author$$agrowth
000028614 65320 $$2Author$$asurface defects
000028614 65320 $$2Author$$anucleation
000028614 65320 $$2Author$$acopper
000028614 65320 $$2Author$$ametallic surfaces
000028614 65320 $$2Author$$astepped single crystal surfaces
000028614 65320 $$2Author$$ascanning tunneling microscopy
000028614 7001_ $$0P:(DE-Juel1)VDB5414$$aIbach, H.$$b1$$uFZJ
000028614 773__ $$0PERI:(DE-600)1479030-0$$a10.1016/S0039-6028(03)00077-3$$gVol. 529, p. 135 - 143$$p135 - 143$$q529<135 - 143$$tSurface science$$v529$$x0039-6028$$y2003
000028614 8567_ $$uhttp://dx.doi.org/10.1016/S0039-6028(03)00077-3
000028614 909CO $$ooai:juser.fz-juelich.de:28614$$pVDB
000028614 9131_ $$0G:(DE-Juel1)FUEK242$$bMaterie$$kM02$$lKondensierte Materie$$vKondensierte Materie$$x0
000028614 9141_ $$y2003
000028614 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000028614 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000028614 9201_ $$0I:(DE-Juel1)VDB44$$d31.12.2001$$gISG$$kISG-4$$lInstitut für biologisch-anorganische Grenzflächen$$x1
000028614 970__ $$aVDB:(DE-Juel1)22904
000028614 980__ $$aVDB
000028614 980__ $$aConvertedRecord
000028614 980__ $$ajournal
000028614 980__ $$aI:(DE-Juel1)PGI-3-20110106
000028614 980__ $$aI:(DE-Juel1)ICS-7-20110106
000028614 980__ $$aUNRESTRICTED
000028614 981__ $$aI:(DE-Juel1)IBI-2-20200312
000028614 981__ $$aI:(DE-Juel1)PGI-3-20110106
000028614 981__ $$aI:(DE-Juel1)ICS-7-20110106