TY  - JOUR
AU  - Giesen, M.
AU  - Ibach, H.
TI  - Homoepitaxial growth on nominally flat and stepped Cu(111) surfaces : island nucleation in fcc sites vs. hcp stacking fault sites
JO  - Surface science
VL  - 529
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-28614
SP  - 135 - 143
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - We have investigated island nucleation in homoepitaxial growth on nominally flat and stepped (vicinal) Cu(1 1 1) surfaces using scanning tunneling microscopy. While on nominally flat Cu(1 1 1), Cu islands nucleate in fcc sites, island nucleation occurs rather in hcp stacking fault sites on stepped Cu(1 1 1) surfaces. We propose that strain on surfaces introduced by steps plays a significant role for the preferred sites. (C) 2003 Elsevier Science B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000181957100014
DO  - DOI:10.1016/S0039-6028(03)00077-3
UR  - https://juser.fz-juelich.de/record/28614
ER  -