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@ARTICLE{Giesen:28614,
author = {Giesen, M. and Ibach, H.},
title = {{H}omoepitaxial growth on nominally flat and stepped
{C}u(111) surfaces : island nucleation in fcc sites vs. hcp
stacking fault sites},
journal = {Surface science},
volume = {529},
issn = {0039-6028},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {PreJuSER-28614},
pages = {135 - 143},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {We have investigated island nucleation in homoepitaxial
growth on nominally flat and stepped (vicinal) Cu(1 1 1)
surfaces using scanning tunneling microscopy. While on
nominally flat Cu(1 1 1), Cu islands nucleate in fcc sites,
island nucleation occurs rather in hcp stacking fault sites
on stepped Cu(1 1 1) surfaces. We propose that strain on
surfaces introduced by steps plays a significant role for
the preferred sites. (C) 2003 Elsevier Science B.V. All
rights reserved.},
keywords = {J (WoSType)},
cin = {ISG-3 / ISG-4},
ddc = {540},
cid = {I:(DE-Juel1)VDB43 / I:(DE-Juel1)VDB44},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK242},
shelfmark = {Chemistry, Physical / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000181957100014},
doi = {10.1016/S0039-6028(03)00077-3},
url = {https://juser.fz-juelich.de/record/28614},
}