001     28614
005     20200402210453.0
024 7 _ |2 DOI
|a 10.1016/S0039-6028(03)00077-3
024 7 _ |2 WOS
|a WOS:000181957100014
037 _ _ |a PreJuSER-28614
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Giesen, M.
|b 0
|u FZJ
|0 P:(DE-Juel1)4744
245 _ _ |a Homoepitaxial growth on nominally flat and stepped Cu(111) surfaces : island nucleation in fcc sites vs. hcp stacking fault sites
260 _ _ |a Amsterdam
|b Elsevier
|c 2003
300 _ _ |a 135 - 143
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Surface Science
|x 0039-6028
|0 5673
|v 529
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We have investigated island nucleation in homoepitaxial growth on nominally flat and stepped (vicinal) Cu(1 1 1) surfaces using scanning tunneling microscopy. While on nominally flat Cu(1 1 1), Cu islands nucleate in fcc sites, island nucleation occurs rather in hcp stacking fault sites on stepped Cu(1 1 1) surfaces. We propose that strain on surfaces introduced by steps plays a significant role for the preferred sites. (C) 2003 Elsevier Science B.V. All rights reserved.
536 _ _ |a Kondensierte Materie
|c M02
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK242
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a epitaxy
653 2 0 |2 Author
|a growth
653 2 0 |2 Author
|a surface defects
653 2 0 |2 Author
|a nucleation
653 2 0 |2 Author
|a copper
653 2 0 |2 Author
|a metallic surfaces
653 2 0 |2 Author
|a stepped single crystal surfaces
653 2 0 |2 Author
|a scanning tunneling microscopy
700 1 _ |a Ibach, H.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB5414
773 _ _ |a 10.1016/S0039-6028(03)00077-3
|g Vol. 529, p. 135 - 143
|p 135 - 143
|q 529<135 - 143
|0 PERI:(DE-600)1479030-0
|t Surface science
|v 529
|y 2003
|x 0039-6028
856 7 _ |u http://dx.doi.org/10.1016/S0039-6028(03)00077-3
909 C O |o oai:juser.fz-juelich.de:28614
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913 1 _ |k M02
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914 1 _ |y 2003
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
920 1 _ |k ISG-4
|l Institut für biologisch-anorganische Grenzflächen
|d 31.12.2001
|g ISG
|0 I:(DE-Juel1)VDB44
|x 1
970 _ _ |a VDB:(DE-Juel1)22904
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981 _ _ |a I:(DE-Juel1)IBI-2-20200312
981 _ _ |a I:(DE-Juel1)PGI-3-20110106
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