%0 Journal Article
%A Breuer, U.
%A Krumpen, W.
%A Fitsilis, F.
%T XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics
%J Analytical and bioanalytical chemistry
%V 375
%@ 1618-2642
%C Berlin
%I Springer
%M PreJuSER-28931
%P 906 - 911
%D 2003
%Z Record converted from VDB: 12.11.2012
%X The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5% was achieved for a typical film thickness of 20-30 nm. Secondary ion mass spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at hetero-interfaces. Examples are given for Ba(x)Sr(1-x)TiO(3) and SrTiO(x) thin films which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 degrees C on Pt electrodes in contrast to films grown directly on Si.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:12707759
%U <Go to ISI:>//WOS:000182702300012
%R 10.1007/s00216-003-1806-4
%U https://juser.fz-juelich.de/record/28931