Journal Article

PreJuSER-28931

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics

Breuer, U.FZJ* ; Krumpen, W.FZJ* ; Fitsilis, F.FZJ*

2003
Springer Berlin

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Please use a persistent id in citations: doi:10.1007/s00216-003-1806-4

Abstract: The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5% was achieved for a typical film thickness of 20-30 nm. Secondary ion mass spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at hetero-interfaces. Examples are given for Ba(x)Sr(1-x)TiO(3) and SrTiO(x) thin films which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 degrees C on Pt electrodes in contrast to films grown directly on Si.

Keyword(s): J ; XRF (auto) ; SIMS (auto) ; SNMS (auto) ; MOCVD (auto) ; BST (auto) ; DRAM (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Zentralabteilung für Chemische Analysen (ZCH)
2. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003

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