TY  - JOUR
AU  - Breuer, U.
AU  - Krumpen, W.
AU  - Fitsilis, F.
TI  - XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics
JO  - Analytical and bioanalytical chemistry
VL  - 375
SN  - 1618-2642
CY  - Berlin
PB  - Springer
M1  - PreJuSER-28931
SP  - 906 - 911
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5% was achieved for a typical film thickness of 20-30 nm. Secondary ion mass spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at hetero-interfaces. Examples are given for Ba(x)Sr(1-x)TiO(3) and SrTiO(x) thin films which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 degrees C on Pt electrodes in contrast to films grown directly on Si.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:12707759
UR  - <Go to ISI:>//WOS:000182702300012
DO  - DOI:10.1007/s00216-003-1806-4
UR  - https://juser.fz-juelich.de/record/28931
ER  -