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000028933 0247_ $$2DOI$$a10.1103/PhysRevLett.90.036801
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000028933 084__ $$2WoS$$aPhysics, Multidisciplinary
000028933 1001_ $$0P:(DE-Juel1)VDB5487$$aBergfeld, S.$$b0$$uFZJ
000028933 245__ $$aSecond-harmonic generation in GaAs : experiment verus theoretical predictions of X(2)xyz
000028933 260__ $$aCollege Park, Md.$$bAPS$$c2003
000028933 300__ $$a036801-1
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000028933 440_0 $$04925$$aPhysical Review Letters$$v90$$x0031-9007
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000028933 520__ $$aFor GaAs we have determined \chi(xyz)((2))(-2omega; omega, omega)\ in second-harmonic generation experiments using two-photon energies between 2 and 5 eV. In addition to the E-1, E-1 + Delta(1), E-0', and E-2 critical-point bulk transitions of GaAs, a surprisingly strong surface transition at 3.35 eV was observed for natively oxidized GaAs(001) samples. A detailed comparison with theoretical predictions reveals that calculations that include many-particle effects at the level of the "scissors" approximation can describe the overall frequency dependence of the second-harmonic susceptibility reasonably well.
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000028933 8567_ $$uhttp://hdl.handle.net/2128/2148$$uhttp://dx.doi.org/10.1103/PhysRevLett.90.036801
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