Journal Article

PreJuSER-28933

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Second-harmonic generation in GaAs : experiment verus theoretical predictions of X(2)xyz

Bergfeld, S.FZJ* ; Daum, W.FZJ*

2003
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2148  doi:10.1103/PhysRevLett.90.036801

Abstract: For GaAs we have determined \chi(xyz)((2))(-2omega; omega, omega)\ in second-harmonic generation experiments using two-photon energies between 2 and 5 eV. In addition to the E-1, E-1 + Delta(1), E-0', and E-2 critical-point bulk transitions of GaAs, a surprisingly strong surface transition at 3.35 eV was observed for natively oxidized GaAs(001) samples. A detailed comparison with theoretical predictions reveals that calculations that include many-particle effects at the level of the "scissors" approximation can describe the overall frequency dependence of the second-harmonic susceptibility reasonably well.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: This version is available at the following Publisher URL: http://prl.aps.org

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