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001     28933
005     20200423203453.0
017 _ _ |a This version is available at the following Publisher URL: http://prl.aps.org
024 7 _ |a 10.1103/PhysRevLett.90.036801
|2 DOI
024 7 _ |a WOS:000180579200042
|2 WOS
024 7 _ |a 2128/2148
|2 Handle
037 _ _ |a PreJuSER-28933
041 _ _ |a eng
082 _ _ |a 550
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |a Bergfeld, S.
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245 _ _ |a Second-harmonic generation in GaAs : experiment verus theoretical predictions of X(2)xyz
260 _ _ |a College Park, Md.
|b APS
|c 2003
300 _ _ |a 036801-1
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 90
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a For GaAs we have determined \chi(xyz)((2))(-2omega; omega, omega)\ in second-harmonic generation experiments using two-photon energies between 2 and 5 eV. In addition to the E-1, E-1 + Delta(1), E-0', and E-2 critical-point bulk transitions of GaAs, a surprisingly strong surface transition at 3.35 eV was observed for natively oxidized GaAs(001) samples. A detailed comparison with theoretical predictions reveals that calculations that include many-particle effects at the level of the "scissors" approximation can describe the overall frequency dependence of the second-harmonic susceptibility reasonably well.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Daum, W.
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773 _ _ |a 10.1103/PhysRevLett.90.036801
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.90.036801
|u http://hdl.handle.net/2128/2148
856 4 _ |u https://juser.fz-juelich.de/record/28933/files/24144.pdf
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|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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914 1 _ |y 2003
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|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
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