%0 Journal Article
%A Wingbermühle, J.
%A Stein, S.
%A Kohlstedt, H.
%T Magnon scattering and tunneling through localized states in magnetic tunnel junctions
%J Journal of applied physics
%V 92
%@ 0021-8979
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-30176
%P 7261
%D 2002
%Z Record converted from VDB: 12.11.2012
%X Spin-dependent tunnel junctions with Co75Fe25 electrodes and a Fe50Mn50 pinning layer were fabricated with tunneling magnetoresistance of about 20% at room temperature. The Al2O3 barriers were formed by ultra-violet light assisted oxidation. The resistance x area (RxA) product was about 375 kOmega mum(2) in the parallel alignment of the magnetizations. The effect of barrier impurities has been investigated via tunneling conductance as a function of temperature and bias voltage for as-deposited and annealed samples. The spin wave parameter alpha was determined to be 3.06x10(-5) and 2.03x10(-5) K-3/2 before and after annealing, respectively. The improved barrier properties after annealing are explained by inelastic hopping via several localized states and reduced magnon scattering. We propose a qualitative model of the barrier homogenization during annealing which supports former Rutherford backscattering and x-ray photoelectron spectroscopy studies. (C) 2002 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000179495100047
%R 10.1063/1.1516844
%U https://juser.fz-juelich.de/record/30176