Journal Article

PreJuSER-30176

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Magnon scattering and tunneling through localized states in magnetic tunnel junctions

Wingbermühle, J.FZJ* ; Stein, S.FZJ* ; Kohlstedt, H.FZJ*

2002
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1231  doi:10.1063/1.1516844

Abstract: Spin-dependent tunnel junctions with Co75Fe25 electrodes and a Fe50Mn50 pinning layer were fabricated with tunneling magnetoresistance of about 20% at room temperature. The Al2O3 barriers were formed by ultra-violet light assisted oxidation. The resistance x area (RxA) product was about 375 kOmega mum(2) in the parallel alignment of the magnetizations. The effect of barrier impurities has been investigated via tunneling conductance as a function of temperature and bias voltage for as-deposited and annealed samples. The spin wave parameter alpha was determined to be 3.06x10(-5) and 2.03x10(-5) K-3/2 before and after annealing, respectively. The improved barrier properties after annealing are explained by inelastic hopping via several localized states and reduced magnon scattering. We propose a qualitative model of the barrier homogenization during annealing which supports former Rutherford backscattering and x-ray photoelectron spectroscopy studies. (C) 2002 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)
2. Elektronische Eigenschaften (IFF-IEE)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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