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000030176 084__ $$2WoS$$aPhysics, Applied
000030176 1001_ $$0P:(DE-Juel1)VDB13230$$aWingbermühle, J.$$b0$$uFZJ
000030176 245__ $$aMagnon scattering and tunneling through localized states in magnetic tunnel junctions
000030176 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2002
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000030176 440_0 $$03051$$aJournal of Applied Physics$$v92$$x0021-8979
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000030176 520__ $$aSpin-dependent tunnel junctions with Co75Fe25 electrodes and a Fe50Mn50 pinning layer were fabricated with tunneling magnetoresistance of about 20% at room temperature. The Al2O3 barriers were formed by ultra-violet light assisted oxidation. The resistance x area (RxA) product was about 375 kOmega mum(2) in the parallel alignment of the magnetizations. The effect of barrier impurities has been investigated via tunneling conductance as a function of temperature and bias voltage for as-deposited and annealed samples. The spin wave parameter alpha was determined to be 3.06x10(-5) and 2.03x10(-5) K-3/2 before and after annealing, respectively. The improved barrier properties after annealing are explained by inelastic hopping via several localized states and reduced magnon scattering. We propose a qualitative model of the barrier homogenization during annealing which supports former Rutherford backscattering and x-ray photoelectron spectroscopy studies. (C) 2002 American Institute of Physics.
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000030176 7001_ $$0P:(DE-Juel1)VDB3112$$aStein, S.$$b1$$uFZJ
000030176 7001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b2$$uFZJ
000030176 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.1516844$$gVol. 92, p. 7261$$p7261$$q92<7261$$tJournal of applied physics$$v92$$x0021-8979$$y2002
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