TY  - JOUR
AU  - Wingbermühle, J.
AU  - Stein, S.
AU  - Kohlstedt, H.
TI  - Magnon scattering and tunneling through localized states in magnetic tunnel junctions
JO  - Journal of applied physics
VL  - 92
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-30176
SP  - 7261
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - Spin-dependent tunnel junctions with Co75Fe25 electrodes and a Fe50Mn50 pinning layer were fabricated with tunneling magnetoresistance of about 20% at room temperature. The Al2O3 barriers were formed by ultra-violet light assisted oxidation. The resistance x area (RxA) product was about 375 kOmega mum(2) in the parallel alignment of the magnetizations. The effect of barrier impurities has been investigated via tunneling conductance as a function of temperature and bias voltage for as-deposited and annealed samples. The spin wave parameter alpha was determined to be 3.06x10(-5) and 2.03x10(-5) K-3/2 before and after annealing, respectively. The improved barrier properties after annealing are explained by inelastic hopping via several localized states and reduced magnon scattering. We propose a qualitative model of the barrier homogenization during annealing which supports former Rutherford backscattering and x-ray photoelectron spectroscopy studies. (C) 2002 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000179495100047
DO  - DOI:10.1063/1.1516844
UR  - https://juser.fz-juelich.de/record/30176
ER  -