% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Wingbermhle:30176,
      author       = {Wingbermühle, J. and Stein, S. and Kohlstedt, H.},
      title        = {{M}agnon scattering and tunneling through localized states
                      in magnetic tunnel junctions},
      journal      = {Journal of applied physics},
      volume       = {92},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-30176},
      pages        = {7261},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Spin-dependent tunnel junctions with Co75Fe25 electrodes
                      and a Fe50Mn50 pinning layer were fabricated with tunneling
                      magnetoresistance of about $20\%$ at room temperature. The
                      Al2O3 barriers were formed by ultra-violet light assisted
                      oxidation. The resistance x area (RxA) product was about 375
                      kOmega mum(2) in the parallel alignment of the
                      magnetizations. The effect of barrier impurities has been
                      investigated via tunneling conductance as a function of
                      temperature and bias voltage for as-deposited and annealed
                      samples. The spin wave parameter alpha was determined to be
                      3.06x10(-5) and 2.03x10(-5) K-3/2 before and after
                      annealing, respectively. The improved barrier properties
                      after annealing are explained by inelastic hopping via
                      several localized states and reduced magnon scattering. We
                      propose a qualitative model of the barrier homogenization
                      during annealing which supports former Rutherford
                      backscattering and x-ray photoelectron spectroscopy studies.
                      (C) 2002 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM / IFF-IEE},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35 / I:(DE-Juel1)VDB38},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000179495100047},
      doi          = {10.1063/1.1516844},
      url          = {https://juser.fz-juelich.de/record/30176},
}