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001     30176
005     20200423203516.0
017 _ _ |a This version is available at the following Publisher URL: http://jap.aip.org
024 7 _ |a 10.1063/1.1516844
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024 7 _ |a WOS:000179495100047
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024 7 _ |a 2128/1231
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037 _ _ |a PreJuSER-30176
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Wingbermühle, J.
|b 0
|u FZJ
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245 _ _ |a Magnon scattering and tunneling through localized states in magnetic tunnel junctions
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2002
300 _ _ |a 7261
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|v 92
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Spin-dependent tunnel junctions with Co75Fe25 electrodes and a Fe50Mn50 pinning layer were fabricated with tunneling magnetoresistance of about 20% at room temperature. The Al2O3 barriers were formed by ultra-violet light assisted oxidation. The resistance x area (RxA) product was about 375 kOmega mum(2) in the parallel alignment of the magnetizations. The effect of barrier impurities has been investigated via tunneling conductance as a function of temperature and bias voltage for as-deposited and annealed samples. The spin wave parameter alpha was determined to be 3.06x10(-5) and 2.03x10(-5) K-3/2 before and after annealing, respectively. The improved barrier properties after annealing are explained by inelastic hopping via several localized states and reduced magnon scattering. We propose a qualitative model of the barrier homogenization during annealing which supports former Rutherford backscattering and x-ray photoelectron spectroscopy studies. (C) 2002 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Stein, S.
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700 1 _ |a Kohlstedt, H.
|b 2
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773 _ _ |a 10.1063/1.1516844
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920 1 _ |k IFF-EKM
|l Elektrokeramische Materialien
|d 31.12.2003
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920 1 _ |k IFF-IEE
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