%0 Journal Article
%A Kawamura, M.
%A Paul, N.
%A Cherepanov, V.
%A Voigtländer, B.
%T Nanowires and Nanorings at the Atomic Level
%J Physical review letters
%V 91
%@ 0031-9007
%C College Park, Md.
%I APS
%M PreJuSER-30247
%P 096102
%D 2003
%Z Record converted from VDB: 12.11.2012
%X The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunneling microscopy images for Si and Ge. Also, different kinds of two-dimensional Si/Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000185235000035
%R 10.1103/PhysRevLett.91.096102
%U https://juser.fz-juelich.de/record/30247