Journal Article

PreJuSER-30247

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Nanowires and Nanorings at the Atomic Level

Kawamura, M.FZJ* ; Paul, N.FZJ* ; Cherepanov, V.FZJ* ; Voigtländer, B.FZJ*

2003
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2150  doi:10.1103/PhysRevLett.91.096102

Abstract: The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunneling microscopy images for Si and Ge. Also, different kinds of two-dimensional Si/Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: This version is available at the following Publisher URL: http://prl.aps.org

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