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000030247 017__ $$aThis version is available at the following Publisher URL: http://prl.aps.org
000030247 0247_ $$2DOI$$a10.1103/PhysRevLett.91.096102
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000030247 084__ $$2WoS$$aPhysics, Multidisciplinary
000030247 1001_ $$0P:(DE-Juel1)VDB22268$$aKawamura, M.$$b0$$uFZJ
000030247 245__ $$aNanowires and Nanorings at the Atomic Level
000030247 260__ $$aCollege Park, Md.$$bAPS$$c2003
000030247 300__ $$a096102
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000030247 440_0 $$04925$$aPhysical Review Letters$$v91$$x0031-9007
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000030247 520__ $$aThe step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunneling microscopy images for Si and Ge. Also, different kinds of two-dimensional Si/Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown.
000030247 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000030247 7001_ $$0P:(DE-Juel1)VDB1226$$aPaul, N.$$b1$$uFZJ
000030247 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b2$$uFZJ
000030247 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b3$$uFZJ
000030247 773__ $$0PERI:(DE-600)1472655-5$$a10.1103/PhysRevLett.91.096102$$gVol. 91, p. 096102$$p096102$$q91<096102$$tPhysical review letters$$v91$$x0031-9007$$y2003
000030247 8567_ $$uhttp://hdl.handle.net/2128/2150$$uhttp://dx.doi.org/10.1103/PhysRevLett.91.096102
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