TY  - JOUR
AU  - Kawamura, M.
AU  - Paul, N.
AU  - Cherepanov, V.
AU  - Voigtländer, B.
TI  - Nanowires and Nanorings at the Atomic Level
JO  - Physical review letters
VL  - 91
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-30247
SP  - 096102
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunneling microscopy images for Si and Ge. Also, different kinds of two-dimensional Si/Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000185235000035
DO  - DOI:10.1103/PhysRevLett.91.096102
UR  - https://juser.fz-juelich.de/record/30247
ER  -