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@ARTICLE{Kawamura:30247,
author = {Kawamura, M. and Paul, N. and Cherepanov, V. and
Voigtländer, B.},
title = {{N}anowires and {N}anorings at the {A}tomic {L}evel},
journal = {Physical review letters},
volume = {91},
issn = {0031-9007},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-30247},
pages = {096102},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {The step-flow growth mode is used to fabricate Si and Ge
nanowires with a width of 3.5 nm and a thickness of one
atomic layer (0.3 nm) by self-assembly. Alternating
deposition of Ge and Si results in the formation of a
nanowire superlattice covering the whole surface. One atomic
layer of Bi terminating the surface is used to distinguish
between the elements Si and Ge. A difference in apparent
height is measured in scanning tunneling microscopy images
for Si and Ge. Also, different kinds of two-dimensional
Si/Ge nanostructures like alternating Si and Ge nanorings
having a width of 5-10 nm were grown.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {550},
cid = {I:(DE-Juel1)VDB43},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Physics, Multidisciplinary},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000185235000035},
doi = {10.1103/PhysRevLett.91.096102},
url = {https://juser.fz-juelich.de/record/30247},
}