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| Hauptseite > Publikationsdatenbank > Nanowires and Nanorings at the Atomic Level > print |
| 001 | 30247 | ||
| 005 | 20200423203518.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://prl.aps.org |
| 024 | 7 | _ | |a 10.1103/PhysRevLett.91.096102 |2 DOI |
| 024 | 7 | _ | |a WOS:000185235000035 |2 WOS |
| 024 | 7 | _ | |a 2128/2150 |2 Handle |
| 037 | _ | _ | |a PreJuSER-30247 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 550 |
| 084 | _ | _ | |2 WoS |a Physics, Multidisciplinary |
| 100 | 1 | _ | |a Kawamura, M. |b 0 |u FZJ |0 P:(DE-Juel1)VDB22268 |
| 245 | _ | _ | |a Nanowires and Nanorings at the Atomic Level |
| 260 | _ | _ | |a College Park, Md. |b APS |c 2003 |
| 300 | _ | _ | |a 096102 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physical Review Letters |x 0031-9007 |0 4925 |v 91 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunneling microscopy images for Si and Ge. Also, different kinds of two-dimensional Si/Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Paul, N. |b 1 |u FZJ |0 P:(DE-Juel1)VDB1226 |
| 700 | 1 | _ | |a Cherepanov, V. |b 2 |u FZJ |0 P:(DE-Juel1)VDB10516 |
| 700 | 1 | _ | |a Voigtländer, B. |b 3 |u FZJ |0 P:(DE-Juel1)VDB5601 |
| 773 | _ | _ | |a 10.1103/PhysRevLett.91.096102 |g Vol. 91, p. 096102 |p 096102 |q 91<096102 |0 PERI:(DE-600)1472655-5 |t Physical review letters |v 91 |y 2003 |x 0031-9007 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1103/PhysRevLett.91.096102 |u http://hdl.handle.net/2128/2150 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/30247/files/27830.pdf |y OpenAccess |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/30247/files/27830.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
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| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |y 2003 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
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