TY  - JOUR
AU  - Busse, C.
AU  - Polop, C.
AU  - Müller, M.
AU  - Albe, K.
AU  - Linke, U.
AU  - Michely, T.
TI  - Stacking-Fault Nucleation on Ir(111)
JO  - Physical review letters
VL  - 91
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-30850
SP  - 0561031 - 0561034
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of adatoms to small mobile adatom clusters which occupy in thermal equilibrium the hcp sites with a significant probability. Using parameters derived independently by field ion microscopy, the model accurately describes the results for Ir(111) and is expected to be valid also for other surfaces.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000184510600027
DO  - DOI:10.1103/PhysRevLett.91.056103
UR  - https://juser.fz-juelich.de/record/30850
ER  -