Journal Article

PreJuSER-30850

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Stacking-Fault Nucleation on Ir(111)

Busse, C. ; Polop, C. ; Müller, M. ; Albe, K. ; Linke, U.FZJ* ; Michely, T.

2003
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2151  doi:10.1103/PhysRevLett.91.056103

Abstract: Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of adatoms to small mobile adatom clusters which occupy in thermal equilibrium the hcp sites with a significant probability. Using parameters derived independently by field ion microscopy, the model accurately describes the results for Ir(111) and is expected to be valid also for other surfaces.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2003
Notes: This version is available at the following Publisher URL: http://prl.aps.org

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