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@ARTICLE{Busse:30850,
author = {Busse, C. and Polop, C. and Müller, M. and Albe, K. and
Linke, U. and Michely, T.},
title = {{S}tacking-{F}ault {N}ucleation on {I}r(111)},
journal = {Physical review letters},
volume = {91},
issn = {0031-9007},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-30850},
pages = {0561031 - 0561034},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {Variable temperature scanning tunneling microscopy
experiments reveal that in Ir(111) homoepitaxy islands
nucleate and grow both in the regular fcc stacking and in
the faulted hcp stacking. Analysis of this effect in
dependence on deposition temperature leads to an atomistic
model of stacking-fault formation: The large, metastable
stacking-fault islands grow by sufficiently fast addition of
adatoms to small mobile adatom clusters which occupy in
thermal equilibrium the hcp sites with a significant
probability. Using parameters derived independently by field
ion microscopy, the model accurately describes the results
for Ir(111) and is expected to be valid also for other
surfaces.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {550},
cid = {I:(DE-Juel1)VDB43},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK242},
shelfmark = {Physics, Multidisciplinary},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000184510600027},
doi = {10.1103/PhysRevLett.91.056103},
url = {https://juser.fz-juelich.de/record/30850},
}