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001     32006
005     20200423203543.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.1541096
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024 7 _ |a WOS:000180687600040
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024 7 _ |a 2128/1239
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037 _ _ |a PreJuSER-32006
041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Schroeder, H.
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245 _ _ |a Leakage currents in high-permittivity thin films
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2003
300 _ _ |a 781
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 82
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Quite often leakage current data through high-permittivity thin films exhibit straight lines in the "Schottky" plot, i.e., log (current density j) versus sqrt (mean applied field), which suggests an electrode-limited current by field-enhanced thermionic emission. Unfortunately, the extracted permittivity at optical frequencies seldom is in agreement with experimental values and often is unacceptably small, i.e., <1. We suggest a model demonstrating that the leakage current in high-permittivity thin films is bulk-limited, but still is showing the characteristic dependence of thermionic emission. This is due to a combination of boundary conditions of the model, low-permittivity thin layers ("dead layer") at the electrodes and current injection/recombination terms at the injecting/collecting electrodes, respectively. (C) 2003 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Schmitz, S.
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700 1 _ |a Meuffels, P.
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773 _ _ |a 10.1063/1.1541096
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856 7 _ |u http://dx.doi.org/10.1063/1.1541096
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