Journal Article

PreJuSER-32006

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Leakage currents in high-permittivity thin films

Schroeder, H.FZJ* ; Schmitz, S.FZJ* ; Meuffels, P.FZJ*

2003
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1239  doi:10.1063/1.1541096

Abstract: Quite often leakage current data through high-permittivity thin films exhibit straight lines in the "Schottky" plot, i.e., log (current density j) versus sqrt (mean applied field), which suggests an electrode-limited current by field-enhanced thermionic emission. Unfortunately, the extracted permittivity at optical frequencies seldom is in agreement with experimental values and often is unacceptably small, i.e., <1. We suggest a model demonstrating that the leakage current in high-permittivity thin films is bulk-limited, but still is showing the characteristic dependence of thermionic emission. This is due to a combination of boundary conditions of the model, low-permittivity thin layers ("dead layer") at the electrodes and current injection/recombination terms at the injecting/collecting electrodes, respectively. (C) 2003 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)
2. Kondensierte Materie (M02)

Appears in the scientific report 2003
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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