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@ARTICLE{Schroeder:32008,
author = {Schroeder, H. and Schmitz, S. and Meuffels, P.},
title = {{S}imulation of leakage current in thin films with dead
layers},
journal = {Integrated ferroelectrics},
volume = {47},
issn = {1058-4587},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-32008},
pages = {197},
year = {2002},
note = {Record converted from VDB: 12.11.2012},
abstract = {There is a long-standing debate on the interpretation of
leakage current data in metal/insulator/metal capacitors
with high permittivity or ferroelectric materials such as
SrTiO3, (Ba,Sr)TiO3 or Pb (Zr,Ti)O-3, respectively: Is the
leakage current density, j, interface or bulk limited? Many
data sets have been interpreted as interface limited by
thermionic emission over a barrier lowered by the combined
effect of mirror potential and applied field
("Schottky-effect") as these data show linear behaviour in
the dependencies on temperature, T, in an "Arrhenius plot"
ln(j/T-2) vs. l/T and on the average field, <E>, in a plot
ln(j) vs. sqrt (<E>) ("Schottky-plot"). However, the
absolute values of j are in many cases much smaller than the
prediction (value of the effective "Richardson constant")
and - much more serious - the optical dielectric constant
deduced from the "Schottky-plot" is very often smaller than
1, an unphysical value. In order to correct the last much
higher electrical fields at or near the interface, E-0 >>
<E>, would be necessary. One possibility is the introduction
of interface layers with low dielectric constant, "dead"
layers, supported by theoretical investigations and
capacitance data measured at different thickness.We have
performed computer simulations to calculate the "bulk
limited" steady state leakage current density through thin
insulating films (with "dead" layers) employing the "Finite
Difference Method". Parameters, which have been varied, are
external ones, such as temperature, applied voltage, film
thickness and interfacial barrier height (electrode
material), and internal ones, such as dielectric constant
and defect concentration of the "bulk" film, thickness and
dielectric constant of the "dead layers".The most important
result is: For nearly all values of the parameter field the
calculated "bulk limited" current density through the thin
film shows nearly perfect "Schottky-" and "Arrhenius" plots
which - interpreted by the simple "Schottky" model - have
the same deficiencies as mentioned above: too small
Richardson constant and unphysical dielectric constant.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {620},
cid = {I:(DE-Juel1)VDB35},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Engineering, Electrical $\&$ Electronic / Physics, Applied
/ Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000179829400023},
doi = {10.1080/10584580190044669},
url = {https://juser.fz-juelich.de/record/32008},
}