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Simulation of leakage current in thin films with dead layers

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2002
Taylor & Francis London [u.a.]

Integrated ferroelectrics 47, 197 () [10.1080/10584580190044669]

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Abstract: There is a long-standing debate on the interpretation of leakage current data in metal/insulator/metal capacitors with high permittivity or ferroelectric materials such as SrTiO3, (Ba,Sr)TiO3 or Pb (Zr,Ti)O-3, respectively: Is the leakage current density, j, interface or bulk limited? Many data sets have been interpreted as interface limited by thermionic emission over a barrier lowered by the combined effect of mirror potential and applied field ("Schottky-effect") as these data show linear behaviour in the dependencies on temperature, T, in an "Arrhenius plot" ln(j/T-2) vs. l/T and on the average field, <E>, in a plot ln(j) vs. sqrt (<E>) ("Schottky-plot"). However, the absolute values of j are in many cases much smaller than the prediction (value of the effective "Richardson constant") and - much more serious - the optical dielectric constant deduced from the "Schottky-plot" is very often smaller than 1, an unphysical value. In order to correct the last much higher electrical fields at or near the interface, E-0 >> <E>, would be necessary. One possibility is the introduction of interface layers with low dielectric constant, "dead" layers, supported by theoretical investigations and capacitance data measured at different thickness.We have performed computer simulations to calculate the "bulk limited" steady state leakage current density through thin insulating films (with "dead" layers) employing the "Finite Difference Method". Parameters, which have been varied, are external ones, such as temperature, applied voltage, film thickness and interfacial barrier height (electrode material), and internal ones, such as dielectric constant and defect concentration of the "bulk" film, thickness and dielectric constant of the "dead layers".The most important result is: For nearly all values of the parameter field the calculated "bulk limited" current density through the thin film shows nearly perfect "Schottky-" and "Arrhenius" plots which - interpreted by the simple "Schottky" model - have the same deficiencies as mentioned above: too small Richardson constant and unphysical dielectric constant.

Keyword(s): J ; bulk- or interface-limited leakage current (auto) ; thin films, dead layers (auto) ; simulation (auto) ; finite difference method (auto)


Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Elektrokeramische Materialien (IFF-EKM)
Research Program(s):
  1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002
Notes: Nachtrag
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 Record created 2012-11-13, last modified 2018-02-10



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