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@ARTICLE{RodriguezContreras:32035,
author = {Rodriguez Contreras, J. and Kohlstedt, H. and Poppe, U. and
Waser, R. and Buchal, Ch.},
title = {{S}urface treatment effects on the thickness dependence of
the remanent polarization of {P}b{Z}r0.52{T}i0.48{O}3
capacitors},
journal = {Applied physics letters},
volume = {83},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-32035},
pages = {126},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {In this letter, we report on the thickness dependence of
the remanent polarization of Pt/PbZr0.52Ti0.48O3/SrRuO3
capacitors. Two different patterning techniques were used to
fabricate the capacitors. For lift-off processed capacitors,
the remanent polarization decreased with decreasing
thickness. Ion-beam-etched capacitors, however, showed a
constant remanent polarization for all PbZr0.52Ti0.48O3 film
thicknesses down to 23 nm. Remarkably, this constant
remanent polarization for ion-beam-etched capacitors
corresponds to the spontaneous polarization expected for a
stress-free bulk PbZr0.52Ti0.48O3 crystal. (C) 2003 American
Institute of Physics.},
keywords = {J (WoSType)},
cin = {IFF-EKM / ISG-1 / IFF-IMF},
ddc = {530},
cid = {I:(DE-Juel1)VDB35 / I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB37},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik / Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK252 / G:(DE-Juel1)FUEK242},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000183877800043},
doi = {10.1063/1.1590431},
url = {https://juser.fz-juelich.de/record/32035},
}