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@ARTICLE{Schroeder:32047,
author = {Schroeder, H. and Schmitz, S.},
title = {{T}he thickness dependence of leakage current in thin
films},
journal = {Applied physics letters},
volume = {83},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-32047},
pages = {4381},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {The leakage current through high-permittivity perovskite
thin films in the nanometer range is of great technological
interest because of the possible applications of these
insulating films in future submicroelectronic devices such
as dielectrics in Gbit dynamic random access memories or
gate oxides in metal-oxide-semiconductor field-effect
transistors. The experimental result of decreasing leakage
current with decreasing thickness of the dielectric for the
same externally applied field can be described by using a
model combining thermionic emission at the
electrode/dielectric interface and a low-mobility,
high-permittivity dielectric with low-permittivity layers at
the interfaces, the so-called dead layers. (C) 2003 American
Institute of Physics.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {530},
cid = {I:(DE-Juel1)VDB35},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000186662000035},
doi = {10.1063/1.1629141},
url = {https://juser.fz-juelich.de/record/32047},
}