%0 Journal Article
%A Filimonov, S.
%A Voigtländer, B.
%T 'Rotating' steps in Si(0 0 1) homoepitaxy
%J Surface science
%V 549
%@ 0039-6028
%C Amsterdam
%I Elsevier
%M PreJuSER-32230
%P 31 - 36
%D 2004
%Z Record converted from VDB: 12.11.2012
%X Steps on Si(001) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to "rotate" toward [110] directions during Si growth. This step "rotation" occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the SA step edge. (C) 2003 Elsevier B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000187894100004
%R 10.1016/j.susc.2003.11.033
%U https://juser.fz-juelich.de/record/32230