Journal Article

PreJuSER-32230

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png 'Rotating' steps in Si(0 0 1) homoepitaxy

Filimonov, S.FZJ* ; Voigtländer, B.FZJ*

2004
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/j.susc.2003.11.033

Abstract: Steps on Si(001) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to "rotate" toward [110] directions during Si growth. This step "rotation" occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the SA step edge. (C) 2003 Elsevier B.V. All rights reserved.

Keyword(s): J ; computer simulations (auto) ; models of surface kinetics (auto) ; molecular beam epitaxy (auto) ; scanning tunneling microscopy (auto) ; faceting (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004

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